The physics of semiconductor microcavities: from by Benoit Deveaud
By Benoit Deveaud
Electron and photon confinement in semiconductor nanostructures is likely one of the such a lot lively parts in stable country study. Written by way of best specialists in good nation physics, this publication presents either a finished evaluation in addition to a first-class creation to basic and utilized facets of light-matter coupling in microcavities.
subject matters coated comprise parametric amplification and polariton beverages, quantum fluid and non-linear dynamical results and parametric instabilities, polariton squeezing, Bose-Einstein condensation of microcavity polaritons, spin dynamics of exciton-polaritons, polariton correlation produced through parametric scattering, growth in III-nitride allotted Bragg reflectors utilizing AlInN/GaN fabrics, excessive potency planar MCLEDs, exciton-polaritons and nanoscale cavities in photonic crystals, and MBE progress of excessive finesse microcavities.
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Additional resources for The physics of semiconductor microcavities: from fundamentals to nanoscale devices
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In the basic theory, the pump polariton field is assumed to be a purely classical field, driven by the resonant laser beam. By further neglecting polariton scattering terms that do not involve the pump mode, the resulting Hamiltonian is quadratic in the signal and idler polariton operators pˆ k and pˆ ki , however containing anomalous terms that do not conserve the particle number. Here k is the signal momentum, k i = 2k p − k is the idler momentum and k p is the pump momentum fixed by the external pump angle.
A circular region thicker than the surrounding, this will act as a lateral potential well for the photon modes, eventually producing confinement. If the planar MC has one or more embedded quantum wells and displays polariton modes, then confined polaritons will arise by virtue of this mechanism. A very shallow pattern is enough to produce confinement of a few polariton modes. As an example, the sample in Ref. 6, 9 and 19 µm. The 6 nm height corresponds in a GaAs MC to a variation of the photon mode energy of about 9 meV.