RF and mm-Wave Power Generation in Silicon by Hua Wang, Kaushik Sengupta

By Hua Wang, Kaushik Sengupta

This publication provides the demanding situations and options of designing strength amplifiers at RF and mm-Wave frequencies in a silicon-based procedure know-how. It covers sensible energy amplifier layout methodologies, power- and spectrum-efficient energy amplifier layout examples within the RF frequency for mobile and instant connectivity purposes, and gear amplifier and gear iteration designs for permitting new conversation and sensing purposes within the mm-Wave and THz frequencies.

With this ebook you are going to learn:

  • Power amplifier layout basics and methodologies
  • Latest advances insilicon-based RF strength amplifier architectures and designs and their integration in instant verbal exchange systems
  • State-of-the-art mm-Wave/THz strength amplifier and tool iteration circuits and structures in silicon
  • Extensive assurance from basics to complex layout themes, concentrating on numerous layers of abstraction: from equipment modeling and circuit layout technique to complicated electronic and mixed-signal architectures for hugely effective and linear energy amplifiers
  • New architectures for strength amplifiers within the cellar and instant connectivity protecting particular layout methodologies and state of the art performances
  • Detailed layout suggestions, trade-off research and layout examples for potency enhancement at strength back-off and linear amplification for spectrally-efficient non-constant envelope modulations
  • Extensive assurance of mm-Wave power-generation concepts from the early days of the 60 GHz study to present state-of the-art reconfigurable, electronic mm-Wave PA architectures
  • Detailed research of energy new release demanding situations within the greater mm-Wave and THz frequencies and novel technical recommendations for a variety for capability purposes, together with ultrafast instant conversation to sensing, imaging and spectroscopy
  • Contributions from the world-class specialists from either academia and industry

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Extra info for RF and mm-Wave Power Generation in Silicon

Example text

8 mA are used for the class AB and class AB/F operations. (a) One-tone test for the gain and the PAE. (b) Two-tone test with a 2-MHz tone spacing for the IMD characteristics. 30 The output voltage and current waveforms of the each power cell. (a) Class F operation of the class AB/F PA. (b) Class AB operation of the class AB/F PA. (c) Conventional class AB PA. 47 48 CHAPTER 2 Power amplifier fundamentals The PA operates nonlinearly and has the undesired phase relationship of the voltage harmonics for class F operation at a low power.

11 Gain characteristics of the fundamental, second harmonic, and third harmonic components. 29 30 CHAPTER 2 Power amplifier fundamentals harmonic intercept point with the fundamental component is called the input third harmonic intercept point (IIP3) and output third harmonic intercept point (OIP3), respectively. Assuming that the drain is shorted at a signal frequency, all the outputconductance terms (Gd, Gd2, Gd3,. ) and the cross-modulation terms (Gmd, Gm2d, Gmd2,. ) vanish, and only the transconductance terms (Gm, Gm2, Gm3, .

Common-mode second harmonics of the differential PA sees the source inductance directly. A simulation result confirms that despite the second harmonic termination at the drain, the nonzero inductance at the source increases the harmonic distortion and makes the linearity very sensitive to its variation. 22, whose implementation method follows that of the drain harmonic termination. 21, removing the sensitivity of the linearity on the source inductance. Furthermore, because the virtual ground of the fundamental frequency is made at the common source, the disturbance of power gain and PAE by the source harmonic termination circuit is almost negligible.

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