Quantum Dots: A Survey of the Properties of Artificial Atoms by T. Chakraborty

By T. Chakraborty

This publication offers with the digital and optical houses of 2 low-dimensional structures: quantum dots and quantum antidots and is split into elements. half one is a self-contained monograph which describes intimately the theoretical and experimental heritage for exploration of digital states of the quantum-confined platforms. ranging from the single-electron photograph of the method, the e-book describes numerous experimental equipment that offer very important info on those structures. targeting many-electron structures, theoretical advancements are defined intimately and their experimental results also are mentioned. the sphere has witnessed a virtually explosive development and a few of the longer term instructions of explorations are highlighted in the direction of the tip of the monograph. the subject material is handled in this type of manner that it's either available to newcomers and invaluable for specialist researchers as a complete assessment of lots of the advancements within the field.Furthermore the publication comprises 37 reprinted articles that have been chosen to supply a first-hand photograph of the general advancements within the box. The early papers were prepared to painting the advancements chronologically, and the more moderen papers offer an summary of destiny path within the examine.

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Extra resources for Quantum Dots: A Survey of the Properties of Artificial Atoms

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Therefore, at T = 0, electron transport is b l o c k e d - the Coulomb blockade (CB), when p~ (N) < pl, Pr < P~ (N + 1). As shown in Fig. 23 (b), a change in the gate voltage (which in turn, changes the electrostatic potential ~N), pe(N + 1) can be made to line up between p~ and Pr [P~ > p~(N + 1) > Pr]. It is then possible for an electron to tunnel from the left 2DEC reservoir into the dot [pl > p~(N + 1)]. The electro-chemical potential in the dot then increases by Ape, and so does the electrostatic potential e~N+l - - e ~ N = e 2 / C [Eq.

30, where the I - V curve for an oscillating barrier turnstile excited at a frequency of 10MHz is shown. There are clear current plateaus at values given by In = necz, where n is an integer. Increasing the source-drain bias voltage, one can make more than one electron to tunnel in each cycle. Kouwenhoven et al. obtained current plateaus corresponding to controlled transport of up to seven electrons per cycle. In principle, the turnstile can be used as a current standard just as the q u a n t u m Hall effect is used as a resistance standard [139].

48-50], [51][R33] to extract information about the many-particle ground states via single-electron transport, as already mentioned in the beginning of this chapter. Their vertical QD is a sub-micrometer pillar fabricated in an In/A1/GaAs double barrier heterostructure. Here the lateral confinement originates from side-wall depletion that is controlled by a "side gate" surrounding the structure, The number of electrons in the dot was controlled by varying the voltage on this gate. T. 0 -40 -50 -60 -70 v (mV) -60 .

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