Power-Switching Converters: Medium and High Power by Dorin O. Neacsu

By Dorin O. Neacsu

Energy converters are on the middle of recent strength electronics. From automobile energy structures to propulsion for giant ships, their use permeates via commercial, advertisement, army, and aerospace purposes of varied scales. Having reached some extent of saturation the place we're not going to determine many new and progressive applied sciences, now seeks to optimize and standardize the functionality of those units. Power-Switching Converters: Medium and excessive energy examines the features and working rules of those structures by way of the right way to elevate their potency and convey them at lower price. This ebook starts with an creation to the sphere, putting the know-how in its company context to spotlight the present tendencies and concerns dealing with the fashionable energy engineer. the rest of the publication presents a close exam of three-phase strength switching converters, together with a few of the difficulties and suggestions interested by various purposes. It discusses high-power semiconductor units, pulse-width modulation (PWM) rules and algorithms for varied implementations, closed-loop present keep an eye on, component-minimized topologies, strength grid interface, parallel and interleaved strength converters, and functional elements equivalent to defense and thermal administration. Filling the distance among textbooks and technical papers, Power-Switching Converters: Medium and excessive strength deals sensible strategies to present business calls for with a spotlight at the specific enterprise wishes of functionality caliber and value potency. It additionally serves as a superb textbook for graduate research.

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4 Qualitatively sketch the collector current versus time during turn-off for a short lifetime IGBT and for a long-lifetime IGBT and explain the differences. 5 Qualitatively sketch the collector current change during the turn-on of an IGBT device controlled through different gate resistors. 6 Qualitatively sketch the collector current change during the turn-off of an IGBT device controlled through different gate resistors. 7 Write a computer program for power-loss estimation based on the equations shown in this chapter and run this program for a simple case of a single IGBT switching a load resistor of 20 V, at 20 kHz, from a DC bus of 400 Vdc.

6. McNeil N, Sheng K, Williams BW, Finley SJ, Assessment of OFF-state negative gate voltage for IGBTs. IEEE Trans. , 13: 436 – 440, 1998. Copyright © 2006 Taylor & Francis Group, LLC Power-Switching Converters 38 7. Hefner AR, An investigation of the drive circuit requirement for the power insulated gate bipolar transistor. IEEE Trans. , 4: 208 –218, 1991. 8. Blaabjerg F and Pedersen JK, Optimized design of a complete three-phase PWM-VSI inverter, IEEE Trans. , 12: 567 – 576, 1997. 9. Neacsu D and Takahashi T, Computer-aided design of a low-cost low-power snubberless three-phase inverter, IEEE COMPEL.

The success of power semiconductor devices in existing applications and the appearance of new applications encouraged the development of new concepts. , 1 to 10 kW switched at 100 s kHz) are a very hot R&D topic. The early adopter segments accounted for about $298 million in power semiconductor sales in 1999 and were projected to grow to at least $765 million in five year, an annual growth rate of 21%. 0 billion worldwide MOSFET market. A special market segment refers to integrated circuits dedicated to power management and motor control.

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