Power Electronics and Energy Conversion Systems: by Adrian Ioinovici

By Adrian Ioinovici

Power Electronics and effort Conversion Systems is a definitive five-volume reference spanning classical idea via functional purposes and consolidating the most recent developments in strength conversion expertise. accomplished but hugely obtainable, every one quantity is organised in a basic-to-sophisticated crescendo, delivering a single-source reference for undergraduate and graduate scholars, researchers and designers.

quantity 1 basics and Hard-switching Converters introduces the main demanding situations in energy electronics from simple elements to operation ideas and provides classical challenging- and soft-switching DC to DC converters, rectifiers and inverters. At a extra complex point, it presents accomplished research of DC and AC types evaluating the on hand methods for his or her derivation and effects. a whole remedy of DC to DC hard-switching converters is given, from basics to trendy commercial ideas and sensible engineering perception. the writer elucidates a variety of contradictions and misunderstandings within the literature, for instance, within the remedy of the discontinuous conduction operation or in deriving AC small-signal versions of converters.

Other key features:
• Consolidates the most recent developments in hard-switching converters together with discontinuous capacitor voltage mode, and their use in power-factor-correction applications
• contains totally labored layout examples, routines, and case reviews, with dialogue of the sensible results of every selection made in the course of the design
• Explains all subject matters intimately with step by step derivation of formulation applicable for power conversion courses
• End-of-section overview of the discovered material
• contains themes taken care of in fresh magazine, convention and program insurance on options, idea and useful issues

With emphasis on transparent clarification, the textual content deals either a radical figuring out of DC to DC converters for undergraduate and graduate scholars in energy electronics, and extra exact fabric appropriate for researchers, designers and training engineers engaged on the improvement and layout of strength electronics. this can be an available reference for engineering and procurement managers from industries comparable to shopper electronics, built-in circuits, aerospace and renewable strength.

Content:
Chapter 1 advent (pages 1–160):
Chapter 2 Modeling DC?DC Converters (pages 161–368):
Chapter three Classical DC?DC PWM Hard?Switching Converters (pages 369–704):
Chapter four Derived constructions of DC?DC Converters (pages 705–831):

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Additional info for Power Electronics and Energy Conversion Systems: Fundamentals and Hard-switching Converters, Volume 1

Sample text

K. 15 Experimental spectrum of the radiated EMI from a 50 W buck converter switching at 115 kHz (y-axis: 10 dB/ div) (Reproduced, with permission, from: H. R. K. ) 28 Power Electronics and Energy Conversion Systems The statutory standards impose tough limits on the harmonic interference created by electrical equipment into the power system. In order to prevent the switching harmonics from interfering with the supply source, an input filter is used. The switching circuit is the power processing stage, which consists of power semiconductor switches and passive reactive elements, such as capacitors and inductors.

A small barrier potential across the diode is created. 16b, the depletion region will become narrow, reducing the resistance to the current flow. There is a voltage drop across a conducting, forward-biased diode, which is called forward voltage. 7 V. 4 V. 16c) causes the depletion layer to widen, increasing the resistance to the current flow. Actually, a very small amount of current can go through a reverse-biased diode. It is called the (reverse) leakage current. The Schottky barrier diode uses a metal–semiconductor junction, resulting in a low forward voltage drop and high switching speed.

The source terminal is electrically connected to the top nþ layer through a metal connection. The superscript “þ” signifies the fact that the regions are “heavily” doped. An insulator layer made of silicon oxide is placed on the substrate on the top of the entire structure, its other side forming the gate terminal through a metal connection. If a positive voltage is applied between the gate and source, the gate will attract the n-type carriers into the p-type layer. The n-type carriers will accumulate at the surface beneath the silicon oxide layer.

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