Emerging Non-Volatile Memories by Seungbum Hong, Orlando Auciello, Dirk Wouters
By Seungbum Hong, Orlando Auciello, Dirk Wouters
This book is an advent to the basics of rising non-volatile thoughts and offers an outline of destiny traits within the box. Readers will locate assurance of 7 vital reminiscence applied sciences, together with Ferroelectric Random entry reminiscence (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change thoughts (PCM), Oxide-based Resistive RAM (RRAM), Probe garage, and Polymer stories. Chapters are established to mirror diffusions and clashes among diversified topics. EmergingNon-Volatile thoughts is a terrific publication for graduate scholars, college, and pros operating within the region of non-volatile memory.
This publication also:
Covers key reminiscence applied sciences, together with Ferroelectric Random entry reminiscence (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), between others.
Provides an summary of non-volatile reminiscence fundamentals.
Broadens readers’ realizing of destiny traits in non-volatile memories.
Read or Download Emerging Non-Volatile Memories PDF
Similar solid-state physics books
Concisely and obviously written by way of preferable scientists, this e-book offers a self-contained advent to the elemental techniques of fractals and demonstrates their use in more than a few subject matters. The authors’ unified description of alternative dynamic difficulties makes the publication super obtainable.
This publication provides the fundamentals and characterization of defects at oxide surfaces. It presents a cutting-edge overview of the sphere, containing info to a few of the sorts of floor defects, describes analytical how to learn defects, their chemical job and the catalytic reactivity of oxides.
This e-book offers generalized heat-conduction legislation which, from a mesoscopic standpoint, are proper to new purposes (especially in nanoscale warmth move, nanoscale thermoelectric phenomena, and in diffusive-to-ballistic regime) and whilst stay alongside of the speed of present microscopic examine.
Magnetic random-access reminiscence (MRAM) is poised to switch conventional computing device reminiscence according to complementary metal-oxide semiconductors (CMOS). MRAM will surpass all different different types of reminiscence units by way of nonvolatility, low strength dissipation, speedy switching pace, radiation hardness, and sturdiness.
- Electron Microscopy in Heterogeneous Catalysis
- Shock Waves in Condensed Matter 1983
- Introduction to the Physics and Chemistry of Materials
- Why Are Things the Way They Are
- Dislocations, Mesoscale Simulations and Plastic Flow
- Tears of the Tree: The Story of Rubber--A Modern Marvel
Additional info for Emerging Non-Volatile Memories
Ferroelectric Thin Films: Synthesis and Basic Properties (Gordon and Breach Publishers, Amsterdam, 1996) 16. A. Paz de Araujo, O. Auciello, R. ), Science and Technology of Integrated Ferroelectrics: Past Eleven Years of the International Symposium on Integrated Ferroelectrics Proceedings. Ferroelectricity and Related Phenomena, Gordon and Breach Publishers, vol. 11 (2000). 17. O. Auciello, R. Dat, R. Ramesh, in Ferroelectric Thin Films: Synthesis and Basic Properties, ed. A. F. W. Taylor (Gordon and Breach Publishers, The Netherlands, 1996), p.
Noguchi, T. Hase, Y. Miyasaka, Jpn. J. Appl. Phys. 35, 4900 (1996) 1 Review of the Science and Technology for Low- and High-Density Nonvolatile… 35 44. T. Thomas, O. I. Kingon, R. Waser, W. Shumacher, Integr. Ferroelectr. 14, 51 (1997) 45. A. S. Patent 5,519,234, 1996 46. L. E. E. J. Schnoes, D. Brasen, J. Electrochem. Soc. 132, 2677 (1985) 47. J. B. Desu, J. Mater. Res. 8, 2644 (1993) 48. R. Bai, A. M. Foster, J. Vetrone, Thin Solid Films 310, 75 (1997) 49. Y. Lesaicherre, S. Yamamichi, K. Takemura, H.
K. Streiffer, J. Im, P. Bachmann, J. Electroceram. 12, 119 (2004) 26. S. W. Grannemann, J. Appl. Phys. 53, 8988 (1982) 27. K. Iijima, Y. Tomita, R. Takayama, I. Ueda, J. Appl. Phys. 60, 361 (1988) 28. K. Iijima, R. Takayama, Y. Tomita, I. Ueda, J. Appl. Phys. 60, 2914 (1986) 29. pd 30. B. Krupanidhi, H. Hu, V. Kumar, J. Appl. Phys. 71, 376 (1992) 31. R. Krauss, O. S. Patent 4,923,585, 1990 32. D. H. N. S. Ameen, O. I. Kingon, Integr. Ferroelectr. 2(1–4), 311 (1992) 33. O. D. I. Kingon, Appl. Phys.