Advances in Research by Frederick Seitz, David Turnbull and Henry Ehrenreich (Eds.)
By Frederick Seitz, David Turnbull and Henry Ehrenreich (Eds.)
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Extra info for Advances in Research
Develop. 6 , 266 (1961). lo 41 ELECTRONIC EFFECTS I N ELASTIC CONSTANTS strain. 3) N ( S ( E ) is the density of states in energy of band (i), and l is the Fermi level of the electrons in the semiconductor. is used to indicate a sum over the bands (i). Let the semiconductor be strained, and call the shift in energy of band (i) caused by the strain Wi). It is then necessary to replace L V ( ~ ) ( by E) W ( E - Wi)) in Eqs. 2). The Fermi level also changes by an amount w, so that j- = lo w, introducing a subscript zero to denote values of quantities in the unstrained state.
A161, 585 (1935); A163, 622 (1936). H. Jones, Phil. Mag. S. Leigh, ibid. 42, 139 (1951). For a review, see N. F. Mott, Progr. Metal Phys. 3, 76 (1952). * J. ELECTRONIC EFFECTS I N ELASTIC CONSTANTS 39 in terms of models of electronic band structure. It will also be seen that some elastic properties of semiconductors are completely dominated by electronic effects. Interpretation of these properties requires an electronic theory. Electronic effects in elastic properties provide a new method for investigating the electronic properties of semiconductors.
114, 746 (1959). 34 20 R. 36Furthermore, all the atomic coordinates are supposed to be known with high accuracy. The method may be demonstrated on the basis of diamond as a salient example. 7. DIAMOND a. , the heat movement of the atoms is rather small at ordinary temperature. The consequence is that the electron density of the atoms falls rather steeply from a maximum to a low value. In such a case, the termination effect is rather large, so that either many extrapolated values have to be used or an artificial temperature factor has to be applied.